ds11102 rev. j-3 1 of 2 2N3904 2N3904 npn small signal transistor features epitaxial planar die construction available in both through-hole and surface mount packages ideal for switching and amplifier applications complementary pnp type available (2n3906) characteristic symbol 2N3904 unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5.0 v collector current - continuous i c 100 ma collector current - peak i cm 200 ma power dissipation (note 1) p d 500 mw thermal resistance, junction to ambient (note 1) r q ja 250 k/w operating and storage temperature range t j ,t stg -55 to +150 c maximum ratings @ t a = 25 c unless otherwise specified mechanical data case: to-92, plastic leads: solderable per mil-std-202, method 208 terminal connections: see diagram marking: type number weight: 0.18 grams (approx.) d cbe h h bottom view e a b c g to-92 dim min max a 4.32 4.83 b 4.32 4.78 c 12.50 15.62 d 0.36 0.56 e 3.15 3.94 g 2.29 2.79 h 1.14 1.40 all dimensions in mm notes: 1. leads maintained at a distance of 2.0mm from body at specified ambient temperature. 2. pulse test: pulse width 300 m s, duty cycle 2%. power semiconductor
ds11102 rev. j-3 2 of 2 2N3904 electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition dc current gain h fe 50 70 100 60 30 ? ? 300 ? ? ? -v ce = 1.0v,- i c = 0.1ma -v ce = 1.0v,- i c = 1.0ma -v ce = 1.0v,- i c = 10ma -v ce = 1.0v,- i c = 50ma -v ce = 1.0v,- i c = 100ma collector saturation voltage v ce(sat) ? 0.25 0.40 v (note 2) -i c = 10ma,- i b = 1.0ma -i c = 50ma,- i b = 5.0ma base saturation voltage v be(sat) ? 0.85 0.95 v (note 2) -i c = 10ma, -i b = 1.0ma -i c = 50ma, -i b = 5.0ma collector cutoff current i cex ? 50 na -v eb = 3.0v, -v ce = 30v emitter cutoff current i bl ? 50 na -v eb = 3.0v, -v ce = 30v collector-base breakdown voltage v (br)cbo 60 v -i c = 10a, -i b = 0 collector-emitter breakdown voltage v (br)ceo 40 v -i c = 1.0ma,- i e = 0 (note 2) emitter-base breakdown voltage v (br)ebo 5.0 v -i e = 10a,- i c = 0 gain bandwidth product f t 250 mhz v ce = 20v, -i c = 10ma, -f = 100mhz collector-base capacitance c cbo ? 4.5 pf -v cb = 5.0v, -i e = 0, f = 100khz emitter-base capacitance c ebo ? 10 pf -v eb = 0.5v, -i c = 0, f = 100khz noise figure ?? 5.0 db -v ce = 5.0v, -i c = 100 m a, r g = 1.0k w , -f = 10 to 15000hz delay time t d ? 35 ns -i b1 = 1.0ma, -i c = 10ma, v cc = 3.0v, v be(off) = 0.5v rise time t r ? 35 ns -i b1 = 1.0ma,- i c = 10ma, -v cc = 3.0v, -v be(off) = 0.5v storage time t s ? 225 ns -i b1 =- i b2 = 1.0ma, -i c = 10ma, -v cc = 3.0v fall time t f ? 75 ns -i b1 =- i b2 = 1.0ma, -i c = 10ma, -v cc = 3.0v notes: 1. leads maintained at a distance of 2.0mm from body at specified ambient temperature. 2. pulse test: pulse width 300 m s, duty cycle 2%.
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